Crucible for semiconductor manufacturing purposes and a process

Details Crucible for semiconductor manufacturing purposes and a process Crucible for semiconductor manufacturing purposes and a process

1982-02-04

1985-07-09

Bernstein, Hiram H.

Chemical apparatus and process disinfecting, deodorizing, preser

Chemical reactor

Including specific material of construction

156DIG83, 432264, C30B 1510

Patent

active

045281637

ABSTRACT:
A crucible for semiconductor technology purposes, especially for the production of silicon crystals, comprising an outer layer portion or layer of silicon dioxide, especially an outer made from granular natural quartz, and an inner lining made from synthetic crystalline quartz is described. The inner lining has on its interior surface a thin amorphous layer suitably made by heating a synthetic quartz layer disposed over a granular natural quartz layer at a sufficient temperature for a sufficient period of time to convert at least a portion of the synthetic crystalline quartz to the amorphous state.

REFERENCES:
patent: 1241971 (1917-10-01), Henderson
patent: 3240568 (1966-03-01), Derby et al.
patent: 4010064 (1977-03-01), Patrick et al.
Encyclopedia of Chemical Technology, vol. 18, 2nd Ed., 1969, John Wiley, pp. 73-77.

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