Crucible for epitaxy from the liquid phase of semiconductor laye

Details Crucible for epitaxy from the liquid phase of semiconductor laye Crucible for epitaxy from the liquid phase of semiconductor laye

1986-10-20

1988-06-07

McIntosh, John P.

Coating apparatus

Immersion or work-confined pool type

Work-confined pool

118421, H01L 21208

Patent

active

047489332

ABSTRACT:
The invention relates to a crucible for the growth of epitaxial layers of chemical compounds formed from several chemical elements by means of epitaxial growth from the liquid phase comprising an elongated support (72), on which a movable part (73) slides longitudinally, the elongated support comprising at least one recess for accommodating a substrate (76) on which is to be deposited at least one epitaxial layer, the movable part comprising at least one cavity (77) receiving a mother source (79) formed from initial epitaxy materials, the cavity having on the surface adjoining the elongated support a lower opening whose dimensions correspond to the dimensions of the substrate (76) present therein. It is characterized in that the movable part (73) has throughout its length a longitudinal groove (81) on the surface which slides longitudinally on the elongated support, this groove having a depth slightly exceeding the irregularities of the substrate and sufficiently small in order that the mother source cannot pass by means of a capillary effect and a width smaller than the dimensions of the substrate in order that the latter cannot penetrate into it, and in that the recess of the elongated support accommodates an elevator (75) on which the substrate is placed, which holds the latter positioned on the lateral edges (82) of the groove (81), the elevator (75) being held in place by means of a small force developed by a pressure system, more particularly as asymmetrical lever (90) movable about an axis or a spring (85) of quartz.

REFERENCES:
patent: 3940296 (1976-02-01), Van Oirschot et al.
patent: 4366771 (1983-01-01), Bowers et al.

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