Crucible for epitaxy from the liquid phase of semiconductor laye

Details Crucible for epitaxy from the liquid phase of semiconductor laye Crucible for epitaxy from the liquid phase of semiconductor laye

1986-10-20

1988-06-07

McIntosh, John P.

Coating apparatus

Immersion or work-confined pool type

Work-confined pool

118421, H01L 21208

Patent

active

047489324

ABSTRACT:
The invention relates to a crucible for growing epitaxial layers having a chemical composition formed by several chemical elements, of which at least one is volatile, by the method of epitaxy from the liquid phase, comprising an elongated support (72) on which a movable part (73) slides longitudinally, with the elongated support comprising at least one recess for accommodating a substrate (76) on which at least one epitaxial layer is to be deposited. The movable part (73) comprises at least one cavity (77) receiving a mother source (79) formed by initial material for epitaxy with the cavity having on the surface adjoining the elongated support a lower opening whose dimensions correspond to the dimensions of the substrates (76) present therein. At least one receptacle (80) accommodates a source for each volatile element of the chemical composition. It is characterized in that at least one of the cavities (77) of the movable part (73), for which a substrate (76) is present below the lower opening, has at least one upper opening formed solely by a calibrated conduit ( 78) connected to the receptacle (80) accommodating a source of each volatile element. Each calibrated conduit (78) controls the supply of the element to the mother source by the surface of the mother source which is not in contact with the epitaxial layer. The calibrated conduit (78) maintains a substantially constant composition for the mother source.

REFERENCES:
patent: 4574730 (1986-03-01), Svilans
patent: 4592304 (1986-06-01), Hager et al.

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