Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus
Reexamination Certificate
2004-04-09
2008-10-28
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Apparatus
C117S213000, C117S900000, C065S374120, C065SDIG008
Reexamination Certificate
active
07442255
ABSTRACT:
The bottom of the crucible has much greater thermal transfer properties, parallel to an axis substantially perpendicular to the bottom, than those of the side walls. The bottom and side walls are formed by materials having the same main chemical constituents. The bottom can be transparent to infrared radiation and the side walls opaque to infrared radiation. The bottom can be made of amorphous silica and the side walls of opaque quartz ceramic. The crucible can also be made of graphite. The device can comprise a graphite felt, arranged between the bottom of the crucible and cooling means, and compression means of the graphite felt. It is thus possible to define a temperature gradient comprised between 8° C./cm and 30° C./cm in the liquid phase.
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Fused Silica Design Manual, Engineering Experiment Station, Georgia Institute of Technology, Atlanta, GA, May 1973, vol. 1, pp. 4-29-4-37.
Einhaus Roland
Lissalde Francois C.
Rivat Pascal
Apollon Solar
Cyberstar
EFD Induction SA
Hiteshew Felisa C
Oliff & Berridg,e PLC
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