Crucible and method of preparation thereof

Details Crucible and method of preparation thereof Crucible and method of preparation thereof

1998-02-03

1999-06-22

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus characterized by composition or treatment thereof

117932, 117 31, 117213, 117943, C30B 1300

Patent

active

059139757

ABSTRACT:
A quartz crucible for use in the preparation of silicon crystals substantially free from crystal void defects and a process for its preparation are disclosed. The crucible is prepared by introducing quartz powder into a rotating mould in an atmosphere containing less than about 0.5% insoluble gases such as argon. The quartz powder accumulates along the inner surface of the mould, and is subsequently heated to fuse the quartz powder to produce the crucible. The gases contained in the bubbles in the resulting crucible are comprised of less than about 0.5% insoluble gases.

REFERENCES:
patent: 4572729 (1986-02-01), Lang et al.
patent: 4935046 (1990-06-01), Uchikawa et al.
patent: 4956208 (1990-09-01), Uchikawa et al.
patent: 5284631 (1994-02-01), Kaneto et al.
patent: 5306388 (1994-04-01), Nakajima et al.
patent: 5308446 (1994-05-01), Bihuniak et al.
patent: 5720809 (1998-02-01), Iino et al.

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