Crucible and method of growing single crystal by using crucible

Details Crucible and method of growing single crystal by using crucible Crucible and method of growing single crystal by using crucible

2008-07-15

2008-07-15

Gupta, Yogendra N. (Department: 1791)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

C117S207000, C117S220000, C117S012000, C117S018000, C117S031000, C117S049000, C117S081000, C117S083000

Reexamination Certificate

active

07399360

ABSTRACT:
Provided are a crucible which prevents polycrystal formation to easily allow growth of optical part material single crystals, and a single crystal growth method employing the crucible. The crucible has a smooth surface of about Rmax 3.2s as the surface roughness of the wall surface1H, concave curved plane1J, cone surface1F and convex curved plane1L of the starting material carrying section1D and the wall surface1K of the seed carrying section1E, which constitute the inner surface of the crucible of a crucible body1A.

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Translation of International Preliminary Report dated Jan. 7, 2005.

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