Crossunder within an active device

Details Crossunder within an active device Crossunder within an active device

1982-12-27

1985-06-04

James, Andrew J.

357 48, 357 35, 357 36, H01L 272, H01L 2972, H01L 274

Patent

active

045217998

ABSTRACT:
A low impedance crossunder region is formed of a low resistivity emitter diffusion within a base region of an active device which extends beneath a portion of a metallization pattern to be crossed. The low resistivity crossunder diffusion is shorted to the base region in order to prevent transistor action between the crossunder region and the base region in contrast with other emitter diffusions within the base region which form diode junctions with the base region.

REFERENCES:
patent: 3295031 (1966-12-01), Schmitz
patent: 3443176 (1969-05-01), Agusta et al.
patent: 3581165 (1971-05-01), Seelbach et al.
patent: 3990092 (1976-11-01), Yoshimura
patent: 4223335 (1980-09-01), Kane
Flaker and Moore, "Transistor Underpass," IBM Tech. Discl. Bulletin, vol. 13, No. 5, Oct. 1970.
Hershman, "Use of Emitter in an Unused Transistor as an Underpass," IBM Tech. Discl. Bulletin, vol. 14, No. 4, Sep. 1971.
Geller and Lewis, "Floating Voltage Line Underpass," IBM Tech. Discl. Bulletin, vol. 14, No. 9, Feb. 1972.
Price and Wolf, "Nt Multiple Underpass Device," IBM Tech. Discl. Bulletin, vol. 19, No. 7, Dec. 1976.

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