Crosstie random access memory element having associated read/wri

Static information storage and retrieval – Magnetic shift registers – Thin film

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365 29, G11C 1908

Patent

active

052299619

ABSTRACT:
A nonvolatile random access memory array is formed by permalloy thin films patterned into "wiggle" shapes. Address lines for reading and/or writing into the memory cells are operatively connected to associated circuitry such that writing at a selected location in the array is accomplished using coincident currents. Each memory cell in the array is arranged for passage of column conducted current to effect magnetoresistance readout in conjunction with row address lines and the aforementioned associated circuitry.

REFERENCES:
L. J. Schwee et al., "The Concept and Initial Studies of a Crosstie Random ccess Memory (CRAM)", J. Appl. Phys. 53(3), Mar. 1982, pp. 2762-2764.

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