Crosstie random access memory element and a process for the fabr

Details Crosstie random access memory element and a process for the fabr Crosstie random access memory element and a process for the fabr

1990-11-19

1993-03-23

Popek, Joseph A.

Static information storage and retrieval

Magnetic shift registers

Thin film

365172, G11C 1908

Patent

active

051970252

ABSTRACT:
A nonvolatile random access memory is formed by thin permalloy shaped into "wiggle" patterns and magnetized to establish a plurality of memory cells arranged into an array. Magnetic domain walls are formed at apexes of the "wiggle" pattern in each memory cell after a predetermined magnetic field is applied along the hard axis of the memory cell array by magnetization so aligned. Row address lines for reading and writing into the memory cells and column address lines for writing into the memory cells are provided to conduct currents through each column of the array for magnetoresistance readout.

REFERENCES:
patent: 3474425 (1969-10-01), Jaeklin
patent: 3846770 (1974-11-01), Schwee et al.
patent: 3868659 (1975-02-01), Schwee
patent: 3868660 (1975-02-01), Schwee
patent: 3997884 (1976-12-01), Battarel et al.
patent: 4075613 (1978-02-01), Torok
patent: 4080591 (1978-03-01), Torok
patent: 4100609 (1978-07-01), Schwee
patent: 4192012 (1980-03-01), Schwee
patent: 4199819 (1980-04-01), Schwee et al.
patent: 4231107 (1980-10-01), Schwee
Schwee et al., "The Concept and Initial Studies of a Crosstie Random Access emory (CRAM)", J. Appl. Phys. 53(3), Mar. 1982, pp. 2762-2764.

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