Crossovers and method of fabrication

Details Crossovers and method of fabrication Crossovers and method of fabrication

1977-06-06

1978-10-03

Truhe, J. V.

Electricity: conductors and insulators

Conduits, cables or conductors

Single duct conduits

29625, 427 54, 427 93, 427 96, H05K 100

Patent

active

041185951

ABSTRACT:
Disclosed is a crossover structure and method of fabricating such crossovers in microelectronic circuits. The invention utilizes as a separator between the crossover beam and the conductor on the substrate a mixture of at least 50 percent by weight of fine grain SiO.sub.2 and an organic dielectric. For high temperature curing, this dielectric can be a silicone resin. For metallization systems which are sensitive to high temperatures, the dielectric can be a low temperature or ultra-violet curing organic material, such as an epoxy. The crossover processing is simplified by fabricating the beam crossover in direct contact with the insulating layer.

REFERENCES:
patent: B231416 (1976-03-01), Marcantonio
patent: 2857560 (1958-10-01), Schnable et al.
patent: 2948930 (1960-08-01), Herbst
patent: 3161843 (1964-12-01), Hodges et al.
patent: 3374110 (1968-03-01), Miller
patent: 3429981 (1969-02-01), Shallahamer et al.
patent: 3461524 (1969-08-01), Lepselter
patent: 3848079 (1974-11-01), Amin
patent: 4001655 (1977-01-01), Voyles et al.
patent: 4042955 (1977-08-01), Imai
Chemical Condensed Dictionary -- p. 783.

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