Cross tie random access memory

Details Cross tie random access memory Cross tie random access memory

1987-01-15

1989-02-07

Moffitt, James W.

Static information storage and retrieval

Magnetic shift registers

Thin film

365170, G11C 1114

Patent

active

048036587

ABSTRACT:
A cross tie random access memory has spaced binary memory elements of thin film magneto-resistive material. A source, drain, and channel under each memory element forms a transistor with the thin film memory element which acts as the gate of the transistor. Circuitry is provided to write in and read out a data bit in the addressed binary memory element by providing current under only the memory element being addressed.

REFERENCES:
patent: 3868659 (1975-02-01), Schwee
patent: 4246647 (1981-01-01), Johnson et al.
patent: 4473893 (1984-09-01), Zierhut et al.
patent: 4722073 (1988-01-01), Lampe et al.
IBM Technical Disclosure Bulletin-vol. 17, No. 10 Mar. 1975; pp. 3074-3075.

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