Cross-talk reduction in semiconductor memory device

Details Cross-talk reduction in semiconductor memory device Cross-talk reduction in semiconductor memory device

1975-06-02

1976-09-28

Miller, Jr., Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307221C, 307224R, 307237, 307208, 328 37, 328 37, 328163, 328166, G11C 1900, H03B 100, H03K 500

Patent

active

039834107

ABSTRACT:
The memory circuit comprises a semiconductor shift register and means for effecting two phase clocking of the digital information through the shift register. Transformer means are provided for inducing a controlled amount of cross-talk in each of the two phases in the opposite sense to cross-talk generated by capacitive components present in the shift register whereby the induced cross-talk substantially cancels out the capacitive generated cross-talk.

REFERENCES:
patent: 3140405 (1964-07-01), Kolling
patent: 3290653 (1966-12-01), Slattery et al.
patent: 3329835 (1967-07-01), D'Agostino
patent: 3714460 (1973-01-01), Clemetson et al.

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