Cross-point memory array

Details Cross-point memory array Cross-point memory array

2007-02-22

2009-11-24

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S536000, C365S148000

Reexamination Certificate

active

07622731

ABSTRACT:
A circuit comprises a bulk silicon integrated circuit (IC). A first metallization layer is arranged adjacent to said bulk silicon IC. Phase change memory (PCM) is arranged adjacent to said first metallization layer and comprises a plurality of PCM cells each including a phase-change material, a heater that selectively heats said phase-change material, and a diode in series with said phase-change material.

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PCT International Search Report and Written Opinion dated Oct. 23, 2007 for International Application No. PCT/US2007/006425; 15 pages.

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