Cross-linked organic thin-film dielectrics

Details Cross-linked organic thin-film dielectrics Cross-linked organic thin-film dielectrics

2011-01-04

2011-01-04

Wu, David (Department: 1796)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S595000, C525S328800

Reexamination Certificate

active

07863603

ABSTRACT:
Cross-linked dielectric layers are facilitated. According to an example embodiment, an organic polymer is mixed with a reaction-stabilized cross-linking material. The organic polymer is cross-linked with the reaction-stabilized cross-linking material to form a dielectric layer.

REFERENCES:
patent: 7605392 (2009-10-01), Nakayama et al.
Klauk et al. (Journal of Applied Physics, 92(9), 2002, 5259-5263).
Yoon et al.Low-Voltage Organic Field-Effect Transistors and Inverters Enabled by Ultrathin Cross-Linked Polymers as Gate Dielectrics, J. Am. Chem. Soc., 2005, 127, 10388-10395.
Someya et al.,Integration and Response of Organic Electronics with Aqueous Microfluidics, Langmuir, 2002, 18, 5299-5302.
Facchetti et al.Gate Dielectrics for Organic Field-Effect Transistors: New Opportunities for Organic Electronics, Adv. Mater., 2005, 17, 1705-1725.
Schroeder et al.High-Performance Organic Transistors Using Solution-Processed Nanoparticle-Filled High-k Polymer Gate Insulators, Adv. Mater., 2005, 17, 1535-1539.
Chen et al.Organic thin-film transistors with nanocomposite dielectric gate insulator, Applied Physics Letters, 2004, Col. 85, No. 15.

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