Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-01-26
2008-03-11
Lee, Calvin (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C438S618000
Reexamination Certificate
active
07342316
ABSTRACT:
A cross-fill metal fill pattern technique is provided such that portions of a metal fill pattern are patterned to accomplish a secondary function. For instance, in the exemplary embodiments, ever other trace or line of interdigitated fingers is routed to a ground, while the interceding traces or lines of interdigitated fingers are routed to a power supply. In this way, a capacitor function is formed across the power supply, providing additional decoupling for the power supply. Moreover, a suitably tight cross-fill metal fill pattern (i.e., higher density of metal) provides an electrical shielding function for electromagnetic radiation passing therethrough.
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StanleyWolf Silicon Processing for the VSLI Era vol. 2 Lattice Press 1990, p. 555.
Booth Richard
Dazzo, Jr. Donald
Agere Systems Inc.
Lee Calvin
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