Cross-fill pattern for metal fill levels, power supply...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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C438S618000

Reexamination Certificate

active

07342316

ABSTRACT:
A cross-fill metal fill pattern technique is provided such that portions of a metal fill pattern are patterned to accomplish a secondary function. For instance, in the exemplary embodiments, ever other trace or line of interdigitated fingers is routed to a ground, while the interceding traces or lines of interdigitated fingers are routed to a power supply. In this way, a capacitor function is formed across the power supply, providing additional decoupling for the power supply. Moreover, a suitably tight cross-fill metal fill pattern (i.e., higher density of metal) provides an electrical shielding function for electromagnetic radiation passing therethrough.

REFERENCES:
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patent: 6661079 (2003-12-01), Bikulcius
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patent: 6853267 (2005-02-01), Chiba et al.
patent: 6949781 (2005-09-01), Chang et al.
StanleyWolf Silicon Processing for the VSLI Era vol. 2 Lattice Press 1990, p. 555.

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