Amplifiers – With semiconductor amplifying device – Including particular power supply circuitry
Reexamination Certificate
2007-01-02
2007-01-02
Choe, Henry (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including particular power supply circuitry
C330S296000
Reexamination Certificate
active
11208833
ABSTRACT:
A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.
REFERENCES:
patent: 3430157 (1969-02-01), Wood
patent: 3919656 (1975-11-01), Sokal et al.
patent: 4607323 (1986-08-01), Sokal et al.
patent: 4717884 (1988-01-01), Mitzlaff
patent: 4772856 (1988-09-01), Nojima et al.
patent: 5146178 (1992-09-01), Nojima et al.
patent: 5327337 (1994-07-01), Cripe
patent: 5525871 (1996-06-01), Bray et al.
patent: 6232841 (2001-05-01), Bartlett et al.
patent: 6369651 (2002-04-01), Dent
patent: 6724255 (2004-04-01), Kee et al.
patent: 6784732 (2004-08-01), Hajimiri et al.
patent: 6825726 (2004-11-01), French et al.
patent: 7058374 (2006-06-01), Levesque et al.
PCT International Search Report in PCT/US03/07140 (a related application) mailed Oct. 10, 2003, 7 pgs.
“Advances in Solid-State Power Supplies for RF Heating,”Electronics&Wireless World, Reed Business Publishing, Sutton, Surrey, GB, vol. 94, No. 1632, Oct. 1, 1988, pp. 1013-1015, 22 (XP000001939).
Watanabe et al., “Analysis on a PWM Power Conversion Amplifier with IGBT Macro Model to Generate Gradient Magnetic Fields in MRI Systems,” Power Electronics and Drive Systems, 1999, PEDS '99,Proceedings of the IEEE 1999 International Conference on Hong Kong, Jul. 27-29, 1999, Piscataway, NJ, USA, IEEE, US, pp. 127-132 (XP010352078).
Patent Abstracts of Japan, vol. 2002, No. 03, Apr. 3, 2002 & JP 2001 308649 A (Sharp Corp), Nov. 2, 2001, abstract.
Patent Abstracts of Japan, vol. 1995, No. 03, Apr. 28, 1995 & JP 06 334446 A (Mori Shinsaku), Dec. 2, 1994, abstract.
Patent Abstracts of Japan, vol. 1999, No. 02, Feb. 26, 1999 & JP 10 308639 A (Sony Corp), Nov. 17, 1998, abstract.
Asbeck, P., “Device and Circuit Approaches for Next-Generation Wireless Communications,” Technical Feature, reviewed by Microwave Journal Editorial Board, 1998, 7 pgs.
Iwadare et al., “Even Harmonic Resonant Class E Tuned Power Amplifier Without RF Choke,”Electronics and Communications in Japan, Part 1, vol. 79, No. 1, 1996.
Radisic et al., “Novel Architectures for High-Efficiency Amplifiers for Wireless Applications,”IEEE Transactions on Microwave Theory and Techniques, vol. 46, No. 11, Nov. 1998, pp. 1901-1909.
Roufougaran, “A 900 MHz RF Power Amplifier in 1 μm CMOS for a Spread-Spectrum Communication Transceiver,” (A thesis submitted in partial satisfaction of the requirements for the degree Master of Science in Electrical Engineering) The University of California, Los Angeles, CA, 1995.
Trask, “Class-F Amplifier Loading Networks: A Unified Design Approach,” ATG Design Services, P.O. Box 25240, Tempe, Arizona 85285-5240, undated, pp. 1-4.
http://www.ece.ucsb.edu/rad/classe.html, RF Circuit Design at UC Santa Barbara: Jul. 16, 1999 (Revised Dec. 10, 1999), pp. 1-2.
Wei et al., “Analysis and Experimental Waveform Study on Inverse Class Class-F Mode of Microwave Power Fets,” Alpha Industries, Inc., Woburn, MA,2000 IEEE MTT-S Digest, p. 525-528.
Inoue et al., “High-Efficiency 0.1 cc Power Amplifier Module for 900 MHz Personal Digital Cellular Telephones,”IEICE Trans. Electron, vol. E82-C, No. 11, Nov. 1999, p. 1906-1912.
Inoue et al., Analysis of Class-F and Inverse Class-F Amplifiers, High Frequency and Optical Semiconductor Division, Mitsubishi Electric Corporation, Japan, 2000IEEE MTT-S Digest, pp. 775-778.
Raab, “Class-E, Class-C, and Class-F Power Amplifiers Based upon a Finite Number of Harmonics,”IEEE Transactions on Microwave Theory and Techniques, vol. 49, No. 8, Aug. 2001, pp. 1462-1468.
Aoki Ichiro
Hajimiri Seyed-Ali
Kee Scott D.
California Institute of Technology
Choe Henry
Jackson Walker L.L.P.
Rourk Christopher J.
LandOfFree
Cross-differential amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cross-differential amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cross-differential amplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3787864