Amplifiers – With semiconductor amplifying device – Including differential amplifier
Reexamination Certificate
2007-10-18
2009-06-02
Choe, Henry K (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including differential amplifier
C330S261000
Reexamination Certificate
active
07541870
ABSTRACT:
Cross-coupled low noise amplifier for cellular applications. A circuitry implementation that includes two pairs of metal oxide semiconductor field-effect transistors (MOSFETs) (either N-type of P-type) operates as an LNA, which can be used within any of a wide variety of communication devices. In one embodiment, this design is particularly adaptable to cellular telephone applications. A majority of the elements are integrated within the design and need not be implemented off-chip, and this can provide for a reduction in area required by the circuitry. A very high output impedance is provided by using two transistors (implemented in a triple well configuration) with resistive source degeneration. A higher than typical power supply voltage can be employed (if desired) to accommodate the voltage drops of the resistors and transistors.
REFERENCES:
patent: 6496067 (2002-12-01), Behzad et al.
patent: 7382189 (2008-06-01), Chen et al.
patent: 7414475 (2008-08-01), Kim
Chang Yuyu
Darabi Hooman
Broadcom Corporation
Choe Henry K
Garlick & Harrison & Markison
Short Shayne X.
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