Critical dimension control with a planarized underlayer

Details Critical dimension control with a planarized underlayer Critical dimension control with a planarized underlayer

1993-07-28

1994-06-28

Quach, T. N.

Fishing, trapping, and vermin destroying

437 69, 437191, 437231, 156653, 1566591, H01L 2144, H01L 21469

Patent

active

053246896

ABSTRACT:
A new method of controlling the critical dimension width of polysilicon by planarizing the photoresist underlayer is described. A semiconductor substrate is provided wherein the surface of the substrate has an uneven topography. A layer of polysilicon is deposited over the uneven surface of the substrate. The polysilicon layer is covered with a spin-on-glass layer wherein the spin-on-glass material planarizes the surface of the underlying topography. The spin-on-glass layer is covered with a uniform thickness layer of photoresist. The photoresist layer is exposed through the desired mask, developed and patterned to form the desired resist mask. The exposed spin-on-glass and polysilicon layers are removed by etch. The photoresist mask is stripped. The spin-on-glass layer remaining over the polysilicon patterned layer is removed, resulting in the polysilicon layer having the desired uniform critical dimension.

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