Patent
1989-10-17
1991-02-26
Hille, Rolf
357 79, H01L 2702, H01L 2354, H01L 2908
Patent
active
049965867
ABSTRACT:
A crimp-type semiconductor device having a non-alloy structure according to this invention has a silicon pellet including a plurality of cathode electrodes and a plurality of gate electrodes arranged to be alternately staggered with the cathode electrodes at the cathode side, and an anode electrode at the anode side. The cathode electrodes are crimped by a cathode electrode post via an electrode member constituted by a thin soft-metal plate and a hard metal plate. The anode electrode is crimped by an anode electrode post via an electrode member. Opposing surfaces of the electrodes, the electrode members, and the electrode posts are not bonded to but crimped in contact with each other. The electrode members are formed to cover the entire surfaces of the cathode electrode and the anode electrode, respectively, and the entire surface of the cathode electrode post and the anode electrode post, respectively. The electrode members and the electrode posts are positioned with respect to each other by positioning guides, respectively.
REFERENCES:
patent: 4587550 (1986-05-01), Matsuda
patent: 4626888 (1986-12-01), Wagano et al.
patent: 4775916 (1988-10-01), Kouzuchi et al.
Japanese Patent Disclosure (kokai) No. 62-216367 Sep. 22, 1987.
Fujiwara Takashi
Iwasaki Masami
Kitagawa Mitsuhiko
Matsuda Hideo
Watanuki Kazuo
Clark S. V.
Hille Rolf
Kabushiki Kaisha Toshiba
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