Crimp-type power semiconductor device

Details Crimp-type power semiconductor device Crimp-type power semiconductor device

1990-09-28

1993-03-30

Hille, Rolf

357 74, 357 79, 357 38, 357 39, H01L 2900, H01L 2974, H01L 29747, H01L 2302

Patent

active

051988828

ABSTRACT:
A crimp-type semiconductor device is provided with a semiconductor substrate having a lifetime-controlled region. This lifetime-controlled region is in the form of a ring, and the lifetime of the minority carriers is shortened in the region. Second-conductivity type impurity regions, which serve as emitter layers, are formed on the semiconductor substrate such that they provide a plurality of concentric arrays. The inner diameter of the ring-like lifetime-controlled region is longer than the diameter of an enveloping circle which is obtained by connecting the radially-inner ends of the impurity regions of the outermost array.

REFERENCES:
patent: 4752818 (1988-06-01), Kushida et al.
Patent Abstract of Japan, vol. 8, No. 4, (E-220) [1441] Jan. 10, 1984.

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