Creep-resistant, high-strength silicon carbide fibers

Compositions: ceramic – Ceramic compositions – Refractory

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501 88, 264625, 264627, 264682, C04B 35565

Patent

active

060691026

ABSTRACT:
A high strength, high creep resistant, boron-doped, silicon carbon fiber having no boron nitride coating, originally formed by sintering, is produced by exposing the fiber to a nitrogen atmosphere at a temperature equal to or preferably elevated above the sintering temperature and also exposing the fiber to a carbon monoxide-containing atmosphere at a temperature sufficient to remove boron and boron nitride. The nitrogen atmosphere step may be performed before or after the carbon monoxide-containing atmosphere step. The resulting, uncoated SiC fibers have tensile strengths greater than approximately 2.0 GPa and Morscher-DiCarlo BSR test creep resistance M values greater than approximately 0.75 at 1400 degrees C. for one hour in argon. The method is applicable to non-sintered fibers as well, in which case the nitrogen exposure is carried out at between approximately 1750 to 2250 degrees C. and the carbon monoxide exposure is carried out at between approximately 1600 to 2200 degrees C.

REFERENCES:
patent: 5139871 (1992-08-01), Wallace et al.
patent: 5792416 (1998-08-01), Sacks et al.
patent: 5851942 (1998-12-01), Sacks et al.
patent: 5928978 (1999-07-01), Barnard et al.

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