Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor
Reexamination Certificate
2011-03-29
2011-03-29
Ha, Nguyen T (Department: 2835)
Electricity: electrical systems and devices
Electrostatic capacitors
Fixed capacitor
C361S301400, C361S312000, C361S313000, C361S321100, C361S321200
Reexamination Certificate
active
07916449
ABSTRACT:
The method for forming the microelectronic device having at least one two or three dimensional capacitor includes creating, on a substrate, a plurality of components and a number of superimposed metal interconnection levels. An insulating layer is formed above a metal interconnection level, and a horizontal metal zone of a next metal interconnection level in which one or more of the insulating blocks created from this insulating layer are incorporated is formed therein. The zone is designed to form a lower structural part of the capacitor.
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“Single Mask Metal-Insulator-Metal (MIM) Capacitor with Copper Damascene Metallization for Sub-0.18μm Mixed Mode Signal and System-on-a-Chip (SoC) Applications”, Liu et al., Proceedings of the IEEE 2000 International Interconnect Technology Conference (CAT. No. 00EX407), IEEE Piscataway, NJ, USA, 2000, pp. 111-113, XP002460408, ISBN: 0-7803-6327-2.
Bruyere Sylvie
Cremer Sébastien
Delpech Philippe
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Ha Nguyen T
Jorgenson Lisa K.
STMicroelectronics SA
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