Creation of anisotropic strain in semiconductor quantum well

Details Creation of anisotropic strain in semiconductor quantum well Creation of anisotropic strain in semiconductor quantum well

2005-02-03

2008-03-25

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C257S014000, C257S018000

Reexamination Certificate

active

07348201

ABSTRACT:
Methods and devices for creating an anisotropic strain in a semiconductor quantum well structure to induce anisotropy thereof are disclosed herein. Initially, a substrate is provided, and a quantum well structure formed upon the substrate. A first crystalline layer (e.g., a GaAs layer) having a first crystalline phase can then be deposited upon the quantum well structure. Thereafter, a second crystalline layer (e.g., a GaN layer) having a second crystalline phase and a thickness thereof can be formed upon the first crystalline layer to thereby induce an anisotropic strain in the quantum well structure to produce a quantum well device thereof. Additionally, the second crystalline layer (e.g., GaN) can be formed from a transparent material and utilized as an anti-reflection layer. By properly choosing the thickness of the second crystalline layer (e.g., a GaN layer), a desired anisotropic strain as well as a desired anti-reflection wavelength can be achieved.

REFERENCES:
patent: 5381260 (1995-01-01), Ballato et al.
patent: 5488226 (1996-01-01), Iafrate et al.
patent: 5559613 (1996-09-01), Deveaud-Pledran et al.
patent: 5579331 (1996-11-01), Shen et al.
patent: 5748359 (1998-05-01), Shen et al.
patent: 5847435 (1998-12-01), Ballato et al.
patent: 5917194 (1999-06-01), Dutta et al.
patent: 5953362 (1999-09-01), Pamulapati et al.
Sormunen et al., GaN/GaAs(100) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor, Journal of Crystal Growth, 270, 2004, pp. 346-350.
Shen et al., High Contrast Optical Modulator Based on Electrically Tunable Polarization Rotation and Phase Retardation in Uniazially Strained (100) Multiple Quantum Wells, IEEE Photonics Technology Letters, vol. 6, No. 6, Jun. 1994, pp. 700-702.
Biermann et al., Double polarization anisotropy in asymmetric, coupled quantum wells under anisotropic, in-plane strain, Optics Express, vol. 10, No. 20, Oct. 2002.
Huang et al., Absorption Anisotropy for Lattice Matched GaAs/AlGaAs Multiple Quantum Well Structures under External Anisotropic Biaxial Strain: Compression along [110] and Tension along [110], Japan Journal of Applied Physics, vol. 39, 2000, pp. 1776-1781.
Shi et al., Tunable Photodetectors Based on Strain Compensated GalnAsSb/AlGaAsSb Multiple Quantum Wells Grown by Molecular Beam Epitaxy, IEEE Transactions on Electron Devices, vol. 44, No. 12, Dec. 1997.
Suzuki et al., Strain effect on electronic and optical properties of GaN/AlGaN quantum-well lasers, Journal of Applied Physics, vol. 80, No. 12, Dec. 1996.
Ohtoshi et al., Orientation Dependence of Optical Gain in Zincblende-GaN Strained-Quantum-Well Lasers, IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, No. 3, May/Jun. 1998.
Mukaihara et al., Engineered Polarization Control of GaAs/AlGaAs Surface-Emitting Lasers by Anisotropic Stress from Elliptical Etched Substrate Hole, IEEE Photonics Technology Letters, vol. 5, No. 2, Feb. 1993.
H. Shen, et al., Properties of Epitaxial Zn0 Thin Films for GaN and Related Applications, MRS Internet J. Nitride Semicond. Res. 4S1, G3.60 (1999).

Affiliated with

Also associated with

Rating

Creation of anisotropic strain in semiconductor quantum well does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Creation of anisotropic strain in semiconductor quantum well, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Creation of anisotropic strain in semiconductor quantum well will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3966287