Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-04-24
2007-04-24
Picardat, Kevn M. (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S459000, C438S652000, C257SE21607
Reexamination Certificate
active
10069517
ABSTRACT:
A method of creating an electrically conducting bonding between a face of a first semiconductor element and a face of a second semiconductor element using heat treatment. The method applies the faces one against the other with the placing between them of at least one layer of a material configured to provide, after heat treatment, an electrically conducting bonding between the two faces. The deposited layers are chosen so that the heat treatment does not induce any reaction product between said material and the semi-conductor elements. Then, a heat treatment is carried out.
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Jalaguier Eric
Jaussaud Claude
Madar Roland
Picardat Kevn M.
Soitec
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