Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2006-01-20
2010-06-01
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S207000, C257S208000, C257S313000, C257SE23142
Reexamination Certificate
active
07728362
ABSTRACT:
Using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise having a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts.
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Bowers Benjamin J.
Correale, Jr. Anthony
Lamb Douglass T.
Rohatgi Nishith
International Business Machines - Corporation
McBurney Mark E.
Schubert Osterrieder & Nickelson PLLC
Taylor Earl N
Vu David
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