Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Reexamination Certificate
2009-01-22
2009-08-11
Nguyen, Thanh (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
C257S689000, C257S619000, C257S620000, C257SE21476
Reexamination Certificate
active
07573130
ABSTRACT:
The present invention relates to a process for preparing a robust crack-absorbing integrated circuit chip comprising a crack trapping structure containing two metal plates and a via-bar structure sandwiched between said plates.
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Bonilla Griselda
Doyle James P
Landis Howard S
Lane Michael W
Liniger Eric G
Aulisio Leander F.
Internatonal Business Machines Corporation
Nguyen Thanh
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