Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2011-08-30
2011-08-30
Pizarro, Marcos D. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257SE21238, C438S462000
Reexamination Certificate
active
08008750
ABSTRACT:
Crack stops for semiconductor devices, semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a barrier structure for a semiconductor device includes a plurality of substantially V-shaped regions. Each of the plurality of substantially V-shaped regions is disposed adjacent another of the plurality of substantially V-shaped regions.
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Beck Michael
Kaltalioglu Erdem
Infineon - Technologies AG
Montalvo Eva Yan
Pizarro Marcos D.
Slater & Matsil L.L.P.
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