Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Patent
1998-12-22
2000-07-04
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
H01L 23544
Patent
active
060842873
ABSTRACT:
Crack stops for substantially preventing cracks and chips produced along the dicing channel from spreading into the active areas of the ICs are described. The crack stops are formed by creating discontinuities in the thickness of the dielectric layer in the dicing channel near the chip edges. The discontinuities can result in increasing and/or decreasing the thickness of the dielectric layer.
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Chen Tze-Chiang
Mitwalsky Alexander R.
Baden Stanton C.
Guay John
International Business Machines - Corporation
Siemens Aktiengesellschaft
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