Crack stop and moisture barrier

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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Details

C257SE23002, C257SE23194, C257S686000, C257S685000, C257S698000, C257S723000, C257S724000, C257S728000, C257S618000, C257S619000, C257S620000

Reexamination Certificate

active

07741715

ABSTRACT:
A design for a crack stop and moisture barrier for a semiconductor device includes a plurality of discrete conductive features formed at the edge of an integrated circuit proximate a scribe line. The discrete conductive features may comprise a plurality of staggered lines, a plurality of horseshoe-shaped lines, or a combination of both.

REFERENCES:
patent: 5834829 (1998-11-01), Dinkel et al.
patent: 6022791 (2000-02-01), Cook et al.
patent: 6163065 (2000-12-01), Seshan et al.
patent: 6271578 (2001-08-01), Mitwalsky et al.
patent: 6365958 (2002-04-01), Ibnabdeljalil et al.
patent: 6486526 (2002-11-01), Narayan et al.
patent: 6495918 (2002-12-01), Brintzinger
patent: 6841455 (2005-01-01), West et al.
patent: 7235864 (2007-06-01), Lee
patent: 2005/0151239 (2005-07-01), Lee

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