Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-03-14
2010-06-22
Williams, Alexander O (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23002, C257SE23194, C257S686000, C257S685000, C257S698000, C257S723000, C257S724000, C257S728000, C257S618000, C257S619000, C257S620000
Reexamination Certificate
active
07741715
ABSTRACT:
A design for a crack stop and moisture barrier for a semiconductor device includes a plurality of discrete conductive features formed at the edge of an integrated circuit proximate a scribe line. The discrete conductive features may comprise a plurality of staggered lines, a plurality of horseshoe-shaped lines, or a combination of both.
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Kim Sun-Oo
Park O Seo
Infineon - Technologies AG
Slater & Matsil L.L.P.
Williams Alexander O
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