Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2011-08-23
2011-08-23
Nguyen, Ha Tran T (Department: 2829)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257SE21599, C257SE23194, C438S462000
Reexamination Certificate
active
08004066
ABSTRACT:
A design for a crack stop and moisture barrier for a semiconductor device includes a plurality of discrete conductive features formed at the edge of an integrated circuit proximate a scribe line. The discrete conductive features may comprise a plurality of staggered lines, a plurality of horseshoe-shaped lines, or a combination of both.
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Kim Sun-Oo
Park O Seo
Infineon - Technologies AG
Nguyen Ha Tran T
Scarlett Shaka
Slater & Matsil L.L.P.
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