Crack resistant passivation layer

Details Crack resistant passivation layer Crack resistant passivation layer

1997-12-12

1999-08-10

Chaudhari, Chandra

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

438778, H01L 214763

Patent

active

059363010

ABSTRACT:
A method for making a device and the device itself which utilizes a passivation layer displaying improved crack resistance is disclosed. This is accomplished through the incorporation of boron into a PSG passivation layer. The temperature of the passivation deposition may need to be kept to a temperature low enough so that the boron compound used for the boron source does not decompose prior to reacting with other reactacts.

REFERENCES:
patent: 4349584 (1982-09-01), Flatley et al.
patent: 4574467 (1986-03-01), Halfacre et al.
patent: 4990464 (1991-02-01), Baumgartner et al.
patent: 5166101 (1991-02-01), Lee et al.
Wolf, S. "Silicon Processing for the VLSI Era vol. 2-Process Integration" Lattice Press, Sunset Beach, CA USA. pp. 194-196, 1990.
Hurley, et al.; "BPSG Films Deposited by APCVD"; Semiconductor International; Oct. 1987; pp. 91-95.
"MMT's Chemical Vapor Deposition Equipment Guide"; Microelectronic Manufacturing and Testing; May 1988; pp. 44-45.
"MMT News and Features on Equipment and Materials for Semiconductor Fabrication, Assembly, and Testing"; Jun., 1989; entire issue.
Bartholomew, L.D., et al; "Doped SiO.sub.2 Deposition from TMP in APCVD"; ETT; Mar.-Apr. 1990; vol. 1-N.2; pp. 167-172.
Wolf, S., et al.; Chemical Vapor Deposition of Amorphous and Polycrystalline Films; Silicon Processing for the VLSI Era; vol. I: Process Technology; Jun. 1987; pp. 182-191.
Korczynski, et al; "Improved Sub-Micron . . . Using TEOS/Ozone APCVD"; Microelectronics Manufacturing Technology; Jan. 1992; pp. 22-27.
S. Wolf, Ph.D., "Silicon Processing", For the VLSI Era, vol. 2-Process Integration, pp. 66-67, 1990.
Bartholomew; "Optimization of APCVD TEOS/O.sub.3 Process for SiO.sub.2 and BPSG"; 3rd Annual Dielectrics; Feb. 11-12, 1991; pp. 110-111.
Winkle, L.W., et al.; "Improved Atmospheric-Pressure . . . Glass Thin Films"; Solid State Technology; Oct. 1991; pp. 104-109.
Becker, F.S., et al.; "Process and film characterization . . . borophosphosilicate glass"; J. Vac. Sci. Technol. B 4(3); May/Jun. 1986; pp. 732-744.
Gralenski; "Advanced APCVD Reactors for Thin Film Deposition"; Microelectronic Manufacturing and Testing; Sep./Oct., 1987; pp. 1-8.
Hurley; "Process Conditions Affecting . . . by FTIR Spectroscopy"; Solid State Technology; Mar., 1987; 5 pages total.
Watkins-Johnson Company; "The Ultimate Production CVD System from Watkins-Johnson Co." 1987; Advertisement; 2 pages.

Affiliated with

Also associated with

Rating

Crack resistant passivation layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Crack resistant passivation layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Crack resistant passivation layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1122603