Cr-capped chromeless phase lithography

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S311000

Reexamination Certificate

active

07732102

ABSTRACT:
A photolithographic mask is adapted for use in imparting a pattern to a substrate. The pattern comprises a plurality of features. At least one of the plurality of features (201) is implemented in the mask as a phase shifting structure (205) with a unitary layer of opaque material (207) disposed thereon. The mask is utilized to impart the pattern to a layer over a semiconductor substrate.

REFERENCES:
patent: 2003/0064298 (2003-04-01), Broeke et al.
patent: 2004/0010770 (2004-01-01), Broeke et al.
patent: 2004/0063000 (2004-04-01), Maurer et al.
patent: 2004/0063002 (2004-04-01), Wu et al.
patent: 2004/0115539 (2004-06-01), Broeke et al.
patent: 2004/0197671 (2004-10-01), Lin et al.
Hsu, Stephen D. et al.; “RET Integration of CPL™ Technology for Random Logic”; Study for ASML Mask Tools, Santa Clara, CA, and Motorola; 18 pages.

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