CPP sensor with improved pinning strength longitudinal bias...

Details CPP sensor with improved pinning strength longitudinal bias... CPP sensor with improved pinning strength longitudinal bias...

2007-08-14

2007-08-14

Watko, Julie Anne (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

10882472

ABSTRACT:
A current perpendicular to plane (CPP) sensor having an in stack bias layer having a desired negative magnetostriction for efficient biasing of the free layer. The sensor includes a free layer, a pinned layer and a first spacer layer sandwiched between the free layer and the pinned layer. The sensor further includes an in stack bias structure disposed adjacent to the free layer, opposite the first spacer layer. The in stack bias structure includes a layer of CoFe exchange coupled with a layer of antiferomagnetic (AFM) material. A layer of CoX is then exchange coupled to the layer of CoFe. The element X can be selected from the material including B, Si, SiB, Ni, Nb, and Y.

REFERENCES:
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patent: 2004/0061983 (2004-04-01), Childress et al.
Pakala, M. et al, “Effect of film microstructure on exchange bias of IrMn/CoFe films,” IEEE Transactions on Magnetics, vol. 36, Issue 5, Sep. 2000.

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