Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2011-02-08
2011-02-08
Heinz, A. J. (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
C029S603140, C029S603160
Reexamination Certificate
active
07885042
ABSTRACT:
A giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor layer formed between the first and the second nonmagnetic metal layer. The semiconductor layer is an n-type oxide semiconductor. When the first and second nonmagnetic metal layers are formed in order, the first nonmagnetic metal layer is formed prior to the second nonmagnetic metal layer, and an anti-oxidizing layer is formed between the first nonmagnetic metal layer and the semiconductor layer. The anti-oxidizing layer is formed of a material incapable of producing a Schottky barrier upon joining to the semiconductor layer.
REFERENCES:
patent: 6480412 (2002-11-01), Bessho et al.
patent: 6617658 (2003-09-01), Kajiyama
patent: 7057258 (2006-06-01), Tran et al.
patent: 2006/0067017 (2006-03-01), Yuasa et al.
patent: 2008/0019060 (2008-01-01), Mizuno et al.
patent: 2003-8102 (2003-01-01), None
U.S. Appl. No. 11/968,911, filed Jan. 3, 2008, Tsuchiya et al.
U.S. Appl. No. 12/112,598, filed Apr. 30, 2008, Hara et al.
U.S. Appl. No. 11/934,979, filed Nov. 5, 2007, Mizuno et al.
U.S. Appl. No. 12/128,352, filed May 28, 2008, Mizuno et al.
U.S. Appl. No. 11/626,562, filed Jan. 24, 2007, Hara et al.
U.S. Appl. No. 11/757,174, filed Jun. 1, 2007, Tsuchiya et al.
U.S. Appl. No. 11/865,384, filed Oct. 1, 2007, Hara et al.
U.S. Appl. No. 11/931,219, filed Oct. 31, 2007, Shimazawa et al.
Hirata Kei
Mizuno Tomohito
Shimazawa Koji
Tsuchiya Yoshihiro
Heinz A. J.
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
TDK Corporation
LandOfFree
CPP magneto-resistive effect device utilizing an... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with CPP magneto-resistive effect device utilizing an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CPP magneto-resistive effect device utilizing an... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2640590