CPP GMR/TMR structure providing higher dR

Details CPP GMR/TMR structure providing higher dR CPP GMR/TMR structure providing higher dR

2004-08-23

2008-08-05

Miller, Brian E (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324120

Reexamination Certificate

active

07408749

ABSTRACT:
A current perpendicular to plane (CPP) sensor having FeN in their free and pinned layers. A tunnel junction sensor (TMR) according to the present invention can have a MgO barrier layer, and a CPP GMR sensor according to the present invention can have a Cr spacer layer.

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