CPP GMR synthetic spin valve enhancement

Details CPP GMR synthetic spin valve enhancement CPP GMR synthetic spin valve enhancement

2005-06-07

2005-06-07

Jolley, Kirsten (Department: 1762)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324000, C360S324100, C029S603070, C029S603140, C427S128000, C427S131000, C427S132000, C427S404000

Reexamination Certificate

active

06903904

ABSTRACT:
In current synthetically pinned CPP SV designs, AP2 always makes a negative contribution to the device's GMR since its magnetization direction must be anti-parallel to the pinned layer (AP1). This effect has been reduced by replacing the conventional single layer AP2, that forms part of the synthetic pinned layer, with a multilayer structure into which has been inserted at least one layer of a material such as tantalum that serves to depolarize the spin of electrons that traverse its interfaces. The result is a reduction of said negative contribution by AP2, leading to a significant increase in the GMR ratio.

REFERENCES:
patent: 5627704 (1997-05-01), Lederman et al.
patent: 5668688 (1997-09-01), Dykes et al.
patent: 6171693 (2001-01-01), Lubitz et al.
patent: 6219211 (2001-04-01), Gill
patent: 6278589 (2001-08-01), Gill
patent: 6295187 (2001-09-01), Pinarbasi

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