Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2005-06-07
2005-06-07
Jolley, Kirsten (Department: 1762)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
C360S324000, C360S324100, C029S603070, C029S603140, C427S128000, C427S131000, C427S132000, C427S404000
Reexamination Certificate
active
06903904
ABSTRACT:
In current synthetically pinned CPP SV designs, AP2 always makes a negative contribution to the device's GMR since its magnetization direction must be anti-parallel to the pinned layer (AP1). This effect has been reduced by replacing the conventional single layer AP2, that forms part of the synthetic pinned layer, with a multilayer structure into which has been inserted at least one layer of a material such as tantalum that serves to depolarize the spin of electrons that traverse its interfaces. The result is a reduction of said negative contribution by AP2, leading to a significant increase in the GMR ratio.
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Ju Kochan
Li Min
Liao Simon
Ackerman Stephen B.
Headway Technologies Inc.
Jolley Kirsten
Saile George D.
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