CPP device with an enhanced dR/R ratio

Details CPP device with an enhanced dR/R ratio CPP device with an enhanced dR/R ratio

2007-05-11

2011-10-04

Evans, Jefferson (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S324110, C360S324120

Reexamination Certificate

active

08031441

ABSTRACT:
A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)nconfiguration where n is an integer ≧1. The pinned layer preferably has an AP2/coupling/AP1 configuration wherein the AP2 portion is a FCC trilayer represented by CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z)where y is 0 to 60 atomic %, and z is 75 to 100 atomic %. In one embodiment, M is Cu with a thickness from 0.5 to 50 Angstroms and S is ZnO with a thickness of 1 to 50 Angstroms. The S layer may be doped with one or more elements. The dR/R ratio of the spin valve is increased to 10% or greater while maintaining acceptable EM and RA performance.

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Co-Pending U.S. Patent HT-05-015, U.S. Appl. No. 11/180,808, filed Jul. 13, 2005, “CPP Structure With Enhanced GMR Ratio”, assigned to the same assignee as the present invention.
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