Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2006-12-05
2006-12-05
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S039000, C257S183000, C257SE39013, C257SE39016, C257SE39019, C257SE39020
Reexamination Certificate
active
07145170
ABSTRACT:
A control quantum bit circuit and a target quantum bit circuit each have a quantum box electrode including a superconductor, a counter electrode coupled to the quantum box electrode through a tunnel barrier, and a gate electrode coupled to the quantum box electrode through a gate capacitor. The quantum box electrode of the control quantum bit circuit is coupled to the quantum box electrode of the target quantum bit circuit through a box-electrode coupling capacitor.
REFERENCES:
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patent: 2000-277723 (2000-10-01), None
Y. Nakamura, et al., “Coherent Control of Macroscopic Quantum States in a Single-Cooper-Pair Box”, Nature, vol. 398, Apr. 29, 1999, pp. 786-788.
Alexander Shnirman, et al., “Quantum Manipulation of Small Josephson Junctions”, Physical Review Letters, vol. 79, No. 12, Sep. 22, 1997, pp. 2371-2374.
Yu. A. Pashkin, et al., “Quantum Oscillations in Two Coupled Charge Qubits”, Nature, vol. 421, Feb. 20, 2003, pp. 823-826.
Nakamura Yasunobu
Tsai Jaw-Shen
Yamamoto Tsuyoshi
Ngo Ngan V.
Riken
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