Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1994-05-16
1995-06-27
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 85, 257 96, 257431, 257615, H01L 29205
Patent
active
054282250
ABSTRACT:
An integrated optical intensity modulator. The modulator is an optical waveguide on a semi-insulating substrate and having a core layer for transmitting an optical signal. The modulator includes contiguous the core layer an active cladding which has a multicoupled quantum well structure. The multicoupled quantum well includes at least one pair of quantum wells separated by a barrier. The modulator further includes first and second additional claddings wherein the core layer and the active cladding are interposed between the additional claddings. A voltage source generates an electric field through the active cladding which varies the refractive index of the active cladding as a function of the strength of the electric field for modulating the optical signal.
REFERENCES:
patent: 5381023 (1995-01-01), Komatsu
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J. E. Zucker et al., "Quaternary Quantum Wells for Electro-Optic Intensity and Phase Modulation at 1.3 and 1.55 .mu.m", Appl. Phys. Lett., 54, 10, 1989.
G. M. Alman et al., "Refractive Index Approximations from Linear Perturbation Theory for Planar MQW Waveguides", IEEE J. Quantum Electron., 28, 650, 1992.
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Herczfeld Peter R.
Malone Steven A.
Paolella Arthur C.
Silva Milson
Anderson William H.
Prenty Mark V.
The United States of America as represented by the Secretary of
Zelenka Michael
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