Coupled-quantum-well field-effect resonant tunneling transistor

Details Coupled-quantum-well field-effect resonant tunneling transistor Coupled-quantum-well field-effect resonant tunneling transistor

1995-01-03

1996-04-30

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257195, 257263, H01L 2906, H01L 310328

Patent

active

055127649

ABSTRACT:
This is a vertical field-effect resonant tunneling transistor device comprising: a semi-conducting substrate 46; a drain region 48 above the semi-conducting substrate; a multiple-barrier multi-well resonant tunneling diode 52, 54, 56, 58, 60 above the drain layer; a two dimensional electron gas heterostructure 64 above the multiple-barrier multi-well resonant tunneling diode; a source region 72 extending through the two dimensional electron gas and above the multiple-barrier multi-well resonant tunneling diode; ohmic contacts 70 on the source region, wherein the source region provides an ohmic connection to the two dimensional electron gas; and gate s! 68, 74 besides the source region.

REFERENCES:
patent: 5428224 (1995-06-01), Hayashi et al.
Resonant Tunneling Transistors, A. C. Seabaugh, et al., CRL, Texas Instruments, OSA Proceedings on Ultrafast electronics and Optoelectronics, ('93), San Francisco, Jan. 25-27, 1993.

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