Patent
1985-06-19
1987-05-12
Edlow, Martin H.
357 4, 357 16, H01L 4902
Patent
active
046654127
ABSTRACT:
A superlattice quantum well device comprising a first set of conductive layers and a second set of conductive layers having discrete electronic energy levels different from those of the first set of layers, separated by relatively nonconductive insulation layers.
REFERENCES:
patent: 4103312 (1978-07-01), Chang et al.
patent: 4250515 (1981-02-01), Esoki et al.
patent: 4286275 (1981-08-01), Heiblum
patent: 4348686 (1982-09-01), Esoki et al.
patent: 4396931 (1983-08-01), Dremke
Heiblum, Solid State Electronics, 24, 343, (1981).
Ishiwara, et al, Appl. Phys. Lett., 40, 66, (1982).
Ohkawa Tihiro
Woolf Lawrence D.
Edlow Martin H.
GA Technologies Inc.
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