Coupled cavity injection laser

Coherent light generators – Particular beam control device – Mode discrimination

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

372 32, 372 92, 372 97, H01S 3098, H01S 310

Patent

active

045832269

ABSTRACT:
Described is an internally mode stabilized injection laser. Stabilization is obtained in a coupled cavity structure where one cavity is passive. The passive cavity is a high efficiency waveguide with dimensions chosen to suppress unwanted modes.

REFERENCES:
patent: 3803511 (1974-04-01), Thompson
patent: 4278322 (1981-07-01), Mahlein
patent: 4358851 (1982-11-01), Scitres et al.
patent: 4485474 (1984-11-01), Osterwalder
patent: 4504950 (1985-03-01), AuYeung
patent: 4528670 (1985-07-01), Burrus, Jr. et al.
S. Akiba et al., "High Rate Pulse Generation from InGaAsP Laser in SELFOC Lens External Resonator", Electronics Letters, Jul. 23rd, 1981, vol. 17, No. 15, pp. 527-529.
"Self-Focusing Lens as Resonator Enables 10-GHz Modulation", Fiberoptic Technology, Oct. 1981, p. 124.
"Discrimination Against Unwanted Orders in the Fabry-Perot Resonator", The Bell System Technical Journal, 1962, pp. 453-462.
"Mode Selection in Lasers", Proceedings of the IEEE, Apr. 1972, vol. 60, No. 4, pp. 422-440.
"Simple System for Broad-Band Single-Mode Tuning of D.H. GaAlAs Lasers", Electronic Letters, vol. 15, No. 3, pp. 73-74, Feb. 1979.
"External Cavity Controlled Single Longitudinal Mode Laser Transmitter Module", Electronic Letters, Nov. 1981, vol. 17, No. 24, p. 931.
"CW and High-Speed Single-Longitudinal-Mode Operation of a Short InGaAsP Injection Laser with External Coupled Cavity", Paper PD #5, Topical Meeting on Optical Fiber-Communications, New Orleans, Feb. 28-Mar. 2, 1983.
"Monolithic Two-Section GaInAsP/InP Active-Optical Resonator Devices Formed by Reactive Ion Etching", Applied Physics Letters, Mar. 1981, vol. 38, pp. 315-317.
"Single-Mode Operation of Coupled-Cavity GaInAsP/InP Semiconductor Lasers", Applied Physics Letters, Jan. 1983, vol. 42, pp. 6-8.
"Short-Cavity Single-Mode 1.3 .mu.m InGaAsP Lasers with Evaporated High-Reflectivity Mirrors", Electronic Letters, vol. 17, No. 25, 1981, pp. 954-956.
"Short-Cavity InGaAsP Injection Lasers: Dependence of Mode Spectra and Single-Longitudinal-Mode Power on Cavity Length", IEEE Journal of Quantum Electronics, Jul., 1982, vol. QE-18, No. 7, pp. 1101-1112.
"Very-High-Speed Back-Illuminated InGaAs/InP Pin Punch-Through Photodiodes", Electronic Letters, vol. 17, No. 12, 1981, pp. 431-432.
Paper No. 954, National Convention of the Institute of Electronics and Communication Engineers of Japan (IECEJ), Sendai, Japan, Apr. 2-4, 1983.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Coupled cavity injection laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Coupled cavity injection laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Coupled cavity injection laser will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1443470

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.