Counteraction of semiconductor impurity effects

Details Counteraction of semiconductor impurity effects Counteraction of semiconductor impurity effects

1983-05-11

1987-09-08

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

357 30, 357 88, 357 59, 148DIG18, 437 2, 437101, H01L 3106, H01L 3118

Patent

active

046925589

ABSTRACT:
Method of counteracting the effects of undesired contaminants in an amorphous semiconductor, and the resulting semiconductor product. An overcompensating agent is incorporated in the semiconductor in a restricted or limited region which is less than the entirety of the semiconductor body. The semiconductor is desirably of amorphous silicon. The undesired contaminant is a p acceptor and the compensating dopant is an n donor. Alternatively, the undesired contaminant can be an n donor and the compensating dopant can be a p acceptor. Typical p acceptors are residual boron and typical n donors are phosphorous. The compensation takes place over the range from about 1 to about 25% of the maximum thickness of the region of compensation. The compensating dopant is present in a limited amount ranging from about 1 part to about 50 parts per million.

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