Active solid-state devices (e.g. – transistors – solid-state diode – Voltage variable capacitance device – With specified dopant profile
Reexamination Certificate
2008-09-09
2010-10-26
Garber, Charles D (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Voltage variable capacitance device
With specified dopant profile
C257S312000, C257S595000, C257S597000, C257SE21364, C257SE27049, C257SE29344, C438S379000
Reexamination Certificate
active
07821103
ABSTRACT:
An improved varactor diode (40) is obtained by providing a substrate (41) having a first surface (43), in which are formed a P+ region (53, 46) proximate the first surface (43), a first N region (54, 45) located beneath the P+ region (53, 46), an N well region (56, 44) located beneath the first N region (54, 45) and a first P counter-doped region (55) located between the first N region (54, 45) and the N well region (56, 44), thereby forming an P+NPN structure for the varactor diode. In some embodiments, a second P-type counter-doped region (59) is provided within the N-well region (56, 44) so as to reduce the N doping concentration within the N well region (56, 44) but without creating a further PN junction therein. The net doping profile (52) provides varactor diodes (40) having a larger tuning ratio than varactors (20) without such counter-doped regions. By interchanging N and P regions an N+PNP varactor is obtained.
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Banerjee et al. (“Simulation and benchmarking of MOS varactors for CMOS090 RF process technology”, Motorola S3 2003 Symposium, Itasca, IL, 2003).
Hartin Olin K.
John Jay P.
Kirchgessner James A.
Liu Chun-Li
Trivedi Vishal P.
Abdelaziez Yasser A
Freescale Semiconductor Inc.
Garber Charles D
Ingrassia Fisher & Lorenz P.C.
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