Static information storage and retrieval – Magnetic bubbles – Guide structure
Patent
1995-11-07
1998-02-24
Moore, David K.
Static information storage and retrieval
Magnetic bubbles
Guide structure
39542108, 395401, 365233, 36518905, 36523001, G06F 926, G06F 1200
Patent
active
057218595
ABSTRACT:
An integrated memory circuit is described which can be operated in a burst access mode. The memory circuit includes an address counter which changes column addresses in one of a number of predetermined patterns. The column address is changes in response to a rising edge of a column address signal (CAS*). The memory also includes a buffer circuit which latches the output of the address counter in response to the falling edge of the column address signal. Memory cells are accessed in a burst manner on the falling edge of the column address signal using the address latched in the buffer.
REFERENCES:
patent: 4344156 (1982-08-01), Eaton et al.
patent: 4484308 (1984-11-01), Lewandowski et al.
patent: 4562555 (1985-12-01), Ouchi et al.
patent: 4567579 (1986-01-01), Patel et al.
patent: 4575825 (1986-03-01), Ozaki et al.
patent: 4603403 (1986-07-01), Toda
patent: 4618947 (1986-10-01), Tran et al.
patent: 4649522 (1987-03-01), Kirsch
patent: 4685089 (1987-08-01), Patel et al.
patent: 4707811 (1987-11-01), Takemae et al.
patent: 4788667 (1988-11-01), Nakano
patent: 4870622 (1989-09-01), Aria et al.
patent: 4875192 (1989-10-01), Matsumoto
patent: 4984217 (1991-01-01), Sato
patent: 5058066 (1991-10-01), Yu
patent: 5126975 (1992-06-01), Handy et al.
patent: 5210723 (1993-05-01), Bates et al.
patent: 5267200 (1993-11-01), Tobita
patent: 5268865 (1993-12-01), Takasugi
patent: 5280594 (1994-01-01), Young et al.
patent: 5305284 (1994-04-01), Iwase
patent: 5319759 (1994-06-01), Chan
patent: 5325330 (1994-06-01), Morgan
patent: 5325502 (1994-06-01), McLaury
patent: 5349566 (1994-09-01), Merritt et al.
patent: 5357469 (1994-10-01), Sommer et al.
patent: 5373227 (1994-12-01), Keeth
patent: 5379261 (1995-01-01), Jones, Jr.
patent: 5392239 (1995-02-01), Margulis et al.
patent: 5410670 (1995-04-01), Hansen et al.
patent: 5452261 (1995-09-01), Chung et al.
patent: 5457659 (1995-10-01), Schaefer
patent: 5483498 (1996-01-01), Hotta
patent: 5485428 (1996-01-01), Lin
patent: 5526320 (1996-06-01), Zagar et al.
"DRAM 1 Meg .times.4 DRAM 5VEDO Page Mode", 1995 DRAM Data Book, pp. 1-1 thru 1-30, (Micron Technology, I).
"Rossini, Pentium, PCI-ISA, Chip Set", Symphony Laboratories, entire book.
"4DRAM 1991", Toshiba America Electronic Components, Inc., pp. A-137-A-159.
"Application Specific DRAM", Toshiba America Electronic Components, Inc., C178, C-260, C 218, (1994).
"Burst DRAM Function & Pinout", Oki Electric Ind., Co., Ltd., 2nd Presentation, Item #619, (Sep. 1994).
"Hyper Page Mode DRAM", 8029 Electronic Engineering, 66, No. 813, Woolwich, London, GB, pp. 47-48, (Sep. 1994).
"Mosel-Vitelic V53C8257H DRAM Specification Sheet, 20 pages, Jul. 2, 1994".
"Pipelined Burst DRAM", Toshiba, JEDEC JC 42.3 Hawaii, (Dec. 1994).
"Samsung Synchronous DRAM", Samsung Electronics, pp. 1-16, (Mar. 1993).
"Synchronous DRAM 2 Meg .times. 8 SDRAM", Micron Semiconductor, Inc., pp. 2-43 through 2-8.
Dave Bursky, "Novel I/O Options and Innovative Architectures Let DRAMs Achieve SRAM Performance; Fast DRAMS can be swapped for SRAM Caches", Electronic Design, vol. 41, No. 15, Cleveland, Ohio, pp. 55-67, (Jul. 22, 1993).
Shiva P. Gowni, et al., "A 9NS, 32K .times. 9, BICMOS TTL Synchronous Cache RAM With Burst Mode Access", IEEE, Custom Integrated Circuits Conference, pp. 781-786, (Mar. 3, 1992).
"Synchronous DRAM 2MEG.times. 8 SDRAM", Micron Semiconductor Inc., Mar. 1994.
"Pipelined Burst DRAM", Toshiba, JEDEC JC 43.2 Hawaii, Dec. 1994.
Micro)n Technology, Inc.
Moore David K.
Nguyen Than V.
LandOfFree
Counter control circuit in a burst memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Counter control circuit in a burst memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Counter control circuit in a burst memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1880852