Coulomb-blockade element and method of manufacturing the same

Details Coulomb-blockade element and method of manufacturing the same Coulomb-blockade element and method of manufacturing the same

1996-11-13

1997-09-09

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

257 9, 257 14, 257 23, 257 24, 257 38, H01L 2906, H01L 3900

Patent

active

056659792

ABSTRACT:
A Coulomb-blockade element includes a silicon layer formed on a substrate through an insulating film. The silicon layer includes a narrow wire portion and first and second electrode portions. The narrow wire portion serves as a conductive island for confining a charge. The first and second electrode portions are formed to be connected to the two ends of the narrow wire portion and are wider than the narrow wire portion. Each of the first and second electrode portions has constrictions on at least one of the upper and lower surfaces thereof, which make a portion near the narrow wire portion thinner than the narrow wire portion.

REFERENCES:
Applied Physics Letters, vol. 64, No. 5, Jan. 31, 1994, pp. 586-588.
Patent Abstracts Of Japan, vol. 17, No. 431, Aug. 10, 1993.
IEEE Transactions On Electron Devices, vol. 41, No. 9, Sep. 1994, pp. 1628-1638.
Applied Physics Letters, vol. 61, No. 23, Dec. 7, 1992, pp. 2820-2822.
Physical Review Letters, vol. 65, No. 6, Aug. 6, 1990, pp. 771-774.
International Electron Devices Meeting Technical Digest, Dec. 14, 1994, pp. 938-940.
"Single-Electron Charging and Periodic Conductance Resonances in GaAs Nanostuctures" by U. Meirav, et al., Physical Review Letters, vol. 65, No. 6, 6 Aug. 1990, pp. 771-774.
"Room-Temperature Single-Electron Memory" by K. Yano, et al., IEEE Transactions on Electron Devices, vol. 41, No. 9, Sep. 1994, pp. 1628-1637 .

Affiliated with

Also associated with

Rating

Coulomb-blockade element and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Coulomb-blockade element and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Coulomb-blockade element and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-72028