CoSi2 Schottky diode integration in BiSMOS process

Details CoSi2 Schottky diode integration in BiSMOS process CoSi2 Schottky diode integration in BiSMOS process

2011-05-17

2011-05-17

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Voltage variable capacitance device manufacture

C438S237000, C438S238000, C438S414000, C438S473000, C438S570000, C257S471000, C257S476000, C257SE21351, C257SE21352, C257SE21359, C257SE21040

Reexamination Certificate

active

07943472

ABSTRACT:
Cobalt silicide (CoSi2) Schottky diodes fabricated per the current art suffer from excess leakage currents in reverse bias. In this invention, an floating p-type region encircles each anode of a CoSi2 Schottky diode comprising of one or more CoSi2 anodes. The resulting p-n junction forms a depletion region under the Schottky junction that reduces leakage current through the Schottky diodes in reverse bias operation.

REFERENCES:
patent: 6882029 (2005-04-01), Gau et al.
patent: 6949440 (2005-09-01), Gau
patent: 2010/0279483 (2010-11-01), Collins et al.

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