CoSb 3 -based thermoelectric device fabrication method

Details CoSb 3 -based thermoelectric device fabrication method CoSb 3 -based thermoelectric device fabrication method

2008-01-22

2008-01-22

Ho, Tu-Tu V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

C257S930000, C257S763000, C257S044000, C257S045000, C257SE31005, C136S237000, C136S240000

Reexamination Certificate

active

07321157

ABSTRACT:
A method of fabricating a CoSb3-based thermoelectric device is disclosed. The method includes providing a high-temperature electrode, providing a buffer layer on the high-temperature electrode, forming composite n-type and p-type layers, attaching the buffer layer to the composite n-type and p-type layers, providing a low-temperature electrode on the composite n-type and p-type layers and separating the composite n-type and p-type layers from each other to define n-type and p-type legs between the high-temperature electrode and the low-temperature electrode.

REFERENCES:
patent: 3880674 (1975-04-01), Saunders
patent: 6288322 (2001-09-01), Kawasaki et al.
patent: 6410840 (2002-06-01), Sudo et al.
patent: 6759586 (2004-07-01), Shutoh et al.
patent: 2003/0041892 (2003-03-01), Fleurial et al.
patent: 2004/0031515 (2004-02-01), Sadatomi et al.
patent: 2004/0195934 (2004-10-01), Tanielian

Affiliated with

Also associated with

Rating

CoSb 3 -based thermoelectric device fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with CoSb 3 -based thermoelectric device fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CoSb 3 -based thermoelectric device fabrication method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2804987