Corrosion resistant structure for conductor and PSG layered semi

Details Corrosion resistant structure for conductor and PSG layered semi Corrosion resistant structure for conductor and PSG layered semi

1981-01-29

1983-08-02

Edlow, Martin H.

357 41, 357 49, 357 52, 357 68, 357 72, H01L 2934, H01L 2702, H01L 2348, H01L 2328

Patent

active

043969348

ABSTRACT:
A semiconductor device comprises an oxide film and a polysilicon electrode formed in succession on a semiconductor substrate, and a phosphor silicate glass layer formed on the polysilicon electrode and the oxide film and having the smoothed surface. An aluminum electrode is formed on the phosphor silicate glass. A nitride film is formed on the aluminum electrode and the phosphor silicate glass layer, for example, by a chemical vapor deposition process, so as to completely cover the phosphor silicate glass layer.

REFERENCES:
patent: 4124863 (1978-11-01), Mason
patent: 4271582 (1981-06-01), Shirai et al.
patent: 4273805 (1981-06-01), Dawson et al.

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