Corrosion-resistant members against a chlorine-based gas

Stock material or miscellaneous articles – Composite – Of inorganic material

Reexamination Certificate

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C428S938000

Reexamination Certificate

active

06207305

ABSTRACT:

BACKGROUND OF THE INVENTION
(1) Field of the Invention
The present invention relates to corrosion-resistant members to be exposed to a chlorine gas-based atmosphere at not less than 600° C.
(2) Related Art Statement
In the current film-forming processes such as the hot CVD (chemical vapor deposition), the plasma CVD and sputtering for semiconductor wafers, a heater is necessary for heating such a semiconductor wafer. NGK Insulators, Ltd. proposed aluminum nitride sintered bodies having high corrosion resistance against the halogen-based corrosive gas as substrates for heaters. Particularly, it is known that the dense aluminum nitride sintered body is a highly heat-conductive material, and its volume resistivity is not less than 10
8
&OHgr;-cm. Therefore, the dense aluminum nitride sintered body is advantageous as a substrate in the heater for producing the semiconductors.
NGK Insulators, Ltd. repeatedly and variously investigated materials for producing the semiconductors, and proposed substrates which have heat resistance, heat impact resistance and corrosion resistance against halogen-based corrosive gas particularly improved by surface-coating a sintered body of aluminum nitride with a dense film of silicon carbide.
However, a heater has not been known yet, which could heat semiconductors up to not less than 600° C. without causing contamination thereof under the condition that the heater is exposed particularly to the chlorine based corrosive gas. Further, a heater has not been known yet either, which would not cause peeling or degradation of a corrosion-resistive film even after being exposed to the chlorine-based corrosive gas at a high temperature range of not less than 600° C. upon application of heat cycles to the heater between a low temperature and such a high temperature range.
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a corrosion-resistant member having a high corrosion resistance against a chlorine-based gas at temperatures of not less than 600° C.
It is another object of the present invention to provide a corrosion-resistant member, the surface of which is not deteriorated or peeled upon application of heating cycles to the member through exposure to the chlorine-based gas at 600° C. and a low temperature. It is a further object of the present invention to provide a heater suitable for semiconductors, which is resistant to heat cycles and does not cause contamination of the semi-conductors.
The present invention relates to the corrosion-resistant member, especially a member will corrosion resistance to a chlorine-based gas, wherein said member is exposed to a chlorine-based gas atmosphere at temperatures of not less than 600° C. and comprising a sintered body made of aluminum nitride and a film of silicon carbide covering a surface of the sintered body and formed by chemical vapor deposition.
These and other objects, features and advantages of the invention will be apparent from reading of the following description of the invention when taken in conjunction with the attached drawings, with the understanding that some modifications, changes and variations could be easily made by the skilled person in the art to which the invention pertains.


REFERENCES:
patent: 5231690 (1993-07-01), Soma et al.
patent: 5306895 (1994-04-01), Ushikoshi et al.
patent: 5490228 (1996-02-01), Soma et al.
patent: 5565247 (1996-10-01), Suzuki
patent: 5800618 (1998-09-01), Niori et al.
patent: 0 506 391 (1992-09-01), None
patent: 0 911 307 (1999-04-01), None
Database WPI Section Ch, Week 199805 Derwent Publications Ltd., London, GB; Class L03, AN 1998-046866 XP002140873 & JP 09295882 A (NGK Insulators Ltd) Nov. 18, 1997 abstract.
Patent Abstracts of Japan vol. 014, No. 460 Oct. 4, 1990 & JP 02 183718 A (Mitsui Eng & Shipbuild Co Ltd), Jul. 18, 1990 abstract.
Patent Abstracts of Japan vol. 1999, No. 08, Jun. 30, 1999 & JP 11 060356 A (Shin Etsu Chem Co Ltd), Mar. 2, 1999 abstract.

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